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BSS816NWH6327XTSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-BSS816NWH6327XTSA1
- Package: SC-70, SOT-323
- Datasheet:
- Stock: 3268
- Description: BSS816NWH6327XTSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 10 Weeks |
| Mounting Type | Surface Mount |
| Package / Case | SC-70, SOT-323 |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| Series | OptiMOS™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Pin Count | 3 |
| JESD-30 Code | R-PDSO-G3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 500mW Ta |
| Operating Mode | ENHANCEMENT MODE |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 160m Ω @ 1.4A, 2.5V |
| Vgs(th) (Max) @ Id | 0.75V @ 3.7μA |
| Input Capacitance (Ciss) (Max) @ Vds | 180pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 1.4A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 0.6nC @ 2.5V |
| Drain to Source Voltage (Vdss) | 20V |
| Drive Voltage (Max Rds On,Min Rds On) | 1.8V 2.5V |
| Vgs (Max) | ±8V |
| Drain Current-Max (Abs) (ID) | 1.4A |
| Drain-source On Resistance-Max | 160Ohm |
| DS Breakdown Voltage-Min | 20V |
| Feedback Cap-Max (Crss) | 10 pF |
| RoHS Status | ROHS3 Compliant |
BSS816NWH6327XTSA1 Description
International Rectifier's Fifth Generation HEXFETs employ cutting-edge manufacturing procedures to provide the lowest on-resistance per silicon area achievable. When HEXFET Power MOSFETs' fast switching speed and ruggedized device architecture are coupled, the result is a highly efficient device that may be used in a variety of applications.
BSS816NWH6327XTSA1 Features
? N-channel communication
? Mode of enhancement
? Level of Ultra Logic (1.8V rated)
? Avalanche danger level
? Meets AEC Q101 requirements.
? 100% lead-free and RoHS compliant
? IEC61249-2-21 certified halogen-free
BSS816NWH6327XTSA1 Applications
Switching applications
