BSS806NEH6327XTSA1

BSS806NEH6327XTSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi

Manufacturer: Infineon Technologies
NO: 376-BSS806NEH6327XTSA1
Package: TO-236-3, SC-59, SOT-23-3
Datasheet:
Stock: 9269
Description: BSS806NEH6327XTSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Gate to Source Voltage (Vgs)	8V
Max Dual Supply Voltage	20V
Drain-source On Resistance-Max	0.057Ohm
Feedback Cap-Max (Crss)	29 pF
Height	1mm
Length	2.9mm
Width	1.3mm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free
Factory Lead Time	10 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Weight	1.437803g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	Automotive, AEC-Q101, HEXFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Number of Elements	1
Power Dissipation-Max	500mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	500mW
Turn On Delay Time	7.5 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	57m Ω @ 2.3A, 2.5V
Vgs(th) (Max) @ Id	0.75V @ 11μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	529pF @ 10V
Current - Continuous Drain (Id) @ 25°C	2.3A Ta
Gate Charge (Qg) (Max) @ Vgs	1.7nC @ 2.5V
Rise Time	9.9ns
Drive Voltage (Max Rds On,Min Rds On)	1.8V 2.5V
Vgs (Max)	±8V
Fall Time (Typ)	3.7 ns
Turn-Off Delay Time	12 ns
Continuous Drain Current (ID)	2.3A