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ContactBSS314PEH6327XTSA1
BSS314PEH6327XTSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-BSS314PEH6327XTSA1
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 1785
- Description: BSS314PEH6327XTSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 10 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2012 |
| Series | OptiMOS™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Pin Count | 3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 500mW Ta |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 500mW |
| FET Type | P-Channel |
| Rds On (Max) @ Id, Vgs | 140m Ω @ 1.5A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 6.3μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 294pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 1.5A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 2.9nC @ 10V |
| Rise Time | 3.9ns |
| Drain to Source Voltage (Vdss) | 30V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Continuous Drain Current (ID) | 1.5A |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | -30V |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
BSS314PEH6327XTSA1 Description
BSS314PEH6327XTSA1 is a P-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a drain to source voltage of 30V. The operating temperature of the BSS314PEH6327XTSA1 is -55°C~150°C TJ and its maximum power dissipation is 500mW Ta. BSS314PEH6327XTSA1 has 3 pins and it is available in Tape & Reel (TR) packaging way.
BSS314PEH6327XTSA1 Features
P-channel
Enhancement mode
Logic level (4.5V rated)
ESD protected
Qualified according AEC Q101
100% Lead-free; RoHS compliant
Halogen-free according to IEC61249-2-21
BSS314PEH6327XTSA1 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
