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ContactBSS209PWH6327XTSA1
BSS209PWH6327XTSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-BSS209PWH6327XTSA1
- Package: SC-70, SOT-323
- Datasheet:
- Stock: 7345
- Description: BSS209PWH6327XTSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 10 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SC-70, SOT-323 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 2011 |
| Series | OptiMOS™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED |
| Voltage - Rated DC | -20V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Current Rating | -580mA |
| Pin Count | 3 |
| Number of Elements | 1 |
| Power Dissipation-Max | 300mW Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 300mW |
| Turn On Delay Time | 26 ns |
| FET Type | P-Channel |
| Rds On (Max) @ Id, Vgs | 550m Ω @ 630mA, 4.5V |
| Vgs(th) (Max) @ Id | 1.2V @ 3.5μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 115pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 630mA Tc |
| Gate Charge (Qg) (Max) @ Vgs | 1.3nC @ 4.5V |
| Rise Time | 7ns |
| Drain to Source Voltage (Vdss) | 20V |
| Drive Voltage (Max Rds On,Min Rds On) | 2.5V 4.5V |
| Vgs (Max) | ±12V |
| Fall Time (Typ) | 4.6 ns |
| Turn-Off Delay Time | 6 ns |
| Continuous Drain Current (ID) | 580mA |
| Gate to Source Voltage (Vgs) | 12V |
| Max Dual Supply Voltage | -20V |
| Drain-source On Resistance-Max | 0.55Ohm |
| Feedback Cap-Max (Crss) | 45 pF |
| Height | 800μm |
| Length | 2mm |
| Width | 1.25mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
BSS209PWH6327XTSA1 Description
Infineon Technologies' CoolMOSTM 7th generation platform, based on the superjunction (SJ) idea, is a game-changing technology for high-voltage power MOSFETs. The CoolMOSTM P7 series takes the place of the 600V CoolMOSTM P6 series. A fast switching SJ MOSFET with extraordinary ease of operation offers reduced ringing, superior body diode lifespan against harsh commutation, and excellent ESD performance.
BSS209PWH6327XTSA1 Features
?P-Channel
? Mode of enhancement
? Level of Super Logic ( 2.5 V rated)
? Operating temperature of 150°C
? Avalanche danger level
BSS209PWH6327XTSA1 Applications
Switching applications
