BSS138W-7-F

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 3.5 Ω @ 220mA, 10V ±20V 50pF @ 10V SC-70, SOT-323


  • Manufacturer: Diodes Incorporated
  • NO: 233-BSS138W-7-F
  • Package: SC-70, SOT-323
  • Datasheet: pdf
  • Stock: 2326
  • Description: MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 3.5 Ω @ 220mA, 10V ±20V 50pF @ 10V SC-70, SOT-323 (Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 16 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Weight 6.010099mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination SMD/SMT
ECCN Code EAR99
Resistance 3.5Ohm
Additional Feature LOW THRESHOLD
Subcategory FET General Purpose Powers
Voltage - Rated DC 50V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 200mA
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Number of Channels 1
Voltage 50V
Power Dissipation-Max 200mW Ta
Element Configuration Single
Current 2A
Operating Mode ENHANCEMENT MODE
Power Dissipation 200mW
Turn On Delay Time 20 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.5 Ω @ 220mA, 10V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 10V
Current - Continuous Drain (Id) @ 25°C 200mA Ta
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 200mA
Threshold Voltage 1.2V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 75V
Dual Supply Voltage 50V
Nominal Vgs 1.2 V
Feedback Cap-Max (Crss) 8 pF
Height 1mm
Length 2.2mm
Width 1.35mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

BSS138W-7-F Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 50pF @ 10V.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 200mA.Using VGS=75V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 75V (that is, no charge flow from drain to source).It is [20 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 20 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 1.2V threshold voltage.Using drive voltage (10V) reduces this device's overall power consumption.

BSS138W-7-F Features


a continuous drain current (ID) of 200mA
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 20 ns
a threshold voltage of 1.2V

BSS138W-7-F Applications


There are a lot of Diodes Incorporated BSS138W-7-F applications of single MOSFETs transistors.

  • Industrial Power Supplies
  • Lighting
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • LCD/LED/ PDP TV Lighting
  • LCD/LED TV
  • Uninterruptible Power Supply
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • DC/DC converters
  • Consumer Appliances

In Stock

Please send RFQ , we will respond immediately.