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The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Factory Lead Time | 14 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Surface Mount | YES |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2005 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 3.5Ohm |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Powers |
| Voltage - Rated DC | 50V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 200mA |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Power Dissipation-Max | 225mW Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 225mW |
| Turn On Delay Time | 20 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 3.5 Ω @ 200mA, 5V |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 200mA Ta |
| Drive Voltage (Max Rds On,Min Rds On) | 5V |
| Vgs (Max) | ±20V |
| Turn-Off Delay Time | 20 ns |
| Continuous Drain Current (ID) | 200mA |
| Threshold Voltage | 500mV |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 0.2A |
| Drain to Source Breakdown Voltage | 50V |
| Nominal Vgs | 500 mV |
| Feedback Cap-Max (Crss) | 5 pF |
| Height | 940μm |
| Length | 2.9mm |
| Width | 1.3mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
The BSS138LT3G is a Power MOSFET, 200 mA, 50 V with N?Channel SOT?23. Metal oxide semiconductor field-effect transistors, or power MOSFETs, are used to switch enormous amounts of current. The most popular power devices are power MOSFETs because of their outstanding paralleling capabilities, quick switching speed, and low gate drive power.
BVSS Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable
These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant
Low Threshold Voltage (VGS(th): 0.85 V?1.5 V) Makes it Ideal for Low Voltage Applications
Miniature SOT?23 Surface Mount Package Saves Board Space
Continuous drain current (ID)
DC?DC converters
Power management in portable
Battery?powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones
Small motor control
Automotive applications
Please send RFQ , we will respond immediately.