BSS138-7-F

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 3.5 Ω @ 220mA, 10V ±20V 50pF @ 10V TO-236-3, SC-59, SOT-23-3


  • Manufacturer: Diodes Incorporated
  • NO: 233-BSS138-7-F
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: pdf
  • Stock: 9686
  • Description: MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 3.5 Ω @ 220mA, 10V ±20V 50pF @ 10V TO-236-3, SC-59, SOT-23-3 (Kg)

Quantity:


  • Delivery: Delivery
  • Payment: payment

In Stock

Please send RFQ , we will respond immediately.

authentication (1) authentication (2) authentication (3) authentication (4) authentication (5) authentication (6) authentication (7) authentication (8) authentication (9)

Purchase & Inquiry

Transport

User guide

Purchase

You may place an order without registering to Chip Smart.
We strongly suggest you sign in before purchasing as you can track your order in real time.

Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.transport

SPECIFICATIONS

Parameters
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 3.5Ohm
Additional Feature HIGH RELIABILITY, LOW THRESHOLD
Subcategory FET General Purpose Powers
Voltage - Rated DC 50V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 200mA
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Number of Channels 1
Voltage 50V
Power Dissipation-Max 300mW Ta
Element Configuration Single
Current 2A
Operating Mode ENHANCEMENT MODE
Power Dissipation 300mW
Turn On Delay Time 20 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.5 Ω @ 220mA, 10V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 10V
Current - Continuous Drain (Id) @ 25°C 200mA Ta
Rise Time 10ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 25 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 200mA
Threshold Voltage 1.2V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 50V
Nominal Vgs 1.2 V
Feedback Cap-Max (Crss) 8 pF
Height 1mm
Length 2.9mm
Width 1.3mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 16 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2003

BSS138-7-F Overview


A device's maximum input capacitance is 50pF @ 10V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 200mA for this device. Drain current refers to the capacity of the device to conduct continuous current.In this device, the drain-source breakdown voltage is 50V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.As a result of its turn-off delay time, which is 20 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 20 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 1.2V.By using drive voltage (10V), this device helps reduce its overall power consumption.

BSS138-7-F Features


a continuous drain current (ID) of 200mA
a drain-to-source breakdown voltage of 50V voltage
the turn-off delay time is 20 ns
a threshold voltage of 1.2V

BSS138-7-F Applications


There are a lot of Diodes Incorporated BSS138-7-F applications of single MOSFETs transistors.

  • LCD/LED/ PDP TV Lighting
  • Motor Drives and Uninterruptible Power Supples
  • Micro Solar Inverter
  • Motor control
  • DC-to-DC converters
  • PFC stages, hard switching PWM stages and resonant switching
  • Synchronous Rectification
  • Power Management Functions
  • LCD/LED TV
  • DC/DC converters

In Stock

Please send RFQ , we will respond immediately.