BSS123W-7-F

BSS123W-7-F datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Diodes Incorporated stock available at Feilidi


  • Manufacturer: Diodes Incorporated
  • NO: 233-BSS123W-7-F
  • Package: SC-70, SOT-323
  • Datasheet: pdf
  • Stock: 9617
  • Description: BSS123W-7-F datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Diodes Incorporated stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 13 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Weight 6.010099mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 6Ohm
Additional Feature HIGH RELIABILITY, LOW THRESHOLD
Subcategory FET General Purpose Powers
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 170mA
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 200mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 200mW
Turn On Delay Time 8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6 Ω @ 170mA, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 60pF @ 25V
Current - Continuous Drain (Id) @ 25°C 170mA Ta
Rise Time 8ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 13 ns
Continuous Drain Current (ID) 170mA
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Feedback Cap-Max (Crss) 6 pF
Height 1mm
Length 2.2mm
Width 1.35mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

BSS123W-7-F Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 60pF @ 25V.Its continuous drain current is 170mA for this device. Drain current refers to the capacity of the device to conduct continuous current.This device has 100V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 100V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 13 ns.Turn-on delay time is?the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 8 ns.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.

BSS123W-7-F Features


a continuous drain current (ID) of 170mA
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 13 ns

BSS123W-7-F Applications


There are a lot of Diodes Incorporated BSS123W-7-F applications of single MOSFETs transistors.

  • Battery Protection Circuit
  • Industrial Power Supplies
  • AC-DC Power Supply
  • Solar Inverter
  • Power Management Functions
  • LCD/LED TV
  • Power Tools
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
  • Synchronous Rectification for ATX 1 Server I Telecom PSU

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