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MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 6 Ω @ 100mA, 10V ±20V 20pF @ 25V TO-236-3, SC-59, SOT-23-3
- Manufacturer: ON Semiconductor
- NO: 598-BSS123LT1G
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 1942
- Description: MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 6 Ω @ 100mA, 10V ±20V 20pF @ 25V TO-236-3, SC-59, SOT-23-3 (Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 15 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 2003 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 6Ohm |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 100V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 170mA |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Power Dissipation-Max | 225mW Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 225mW |
| Turn On Delay Time | 20 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 6 Ω @ 100mA, 10V |
| Vgs(th) (Max) @ Id | 2.6V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 20pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 170mA Ta |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Turn-Off Delay Time | 40 ns |
| Continuous Drain Current (ID) | 170mA |
| Threshold Voltage | 800mV |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 100V |
| Nominal Vgs | 20 V |
| Height | 1.01mm |
| Length | 3.04mm |
| Width | 1.4mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
BSS123LT1G Overview
A device's maximum input capacitance is 20pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.This device conducts a continuous drain current (ID) of 170mA, which is the maximum continuous current transistor can conduct.Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=100V. And this device has 100V drain to source breakdown voltage.Its turn-off delay time is 40 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 20 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.In this case, the threshold voltage of the transistor is 800mV, which means that it will not activate any of its functions when its threshold voltage reaches 800mV.This device reduces its overall power consumption by using drive voltage (10V).
BSS123LT1G Features
a continuous drain current (ID) of 170mA
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 40 ns
a threshold voltage of 800mV
BSS123LT1G Applications
There are a lot of ON Semiconductor BSS123LT1G applications of single MOSFETs transistors.
- Industrial Power Supplies
- Telecom 1 Sever Power Supplies
- Motor control
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Power Management Functions
- Motor drives and Uninterruptible Power Supplies
- Lighting, Server, Telecom and UPS.
- AC-DC Power Supply
- LCD/LED/ PDP TV Lighting
- Synchronous Rectification
