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| Parameters | |
|---|---|
| Factory Lead Time | 8 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Weight | 30mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2012 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 360mW Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 225mW |
| Turn On Delay Time | 20 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 6 Ω @ 170mA, 10V |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 21.5pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 170mA Ta |
| Gate Charge (Qg) (Max) @ Vgs | 2.5nC @ 10V |
| Rise Time | 1.7ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 5.6 ns |
| Turn-Off Delay Time | 40 ns |
| Continuous Drain Current (ID) | 170mA |
| Threshold Voltage | 1.6V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 100V |
| Max Junction Temperature (Tj) | 150°C |
| Height | 1.11mm |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
This N-channel enhancement mode field effect transistor is produced using high cell density, trench MOSFET technology. This product minimizes on-state resistance while providing rugged, reliable, and fast switching performance. This product is particularly suited for low-voltage, low-current applications such as small servo motor control, power MOSFET gate drivers, logic level transistor, high-speed line drivers, power management power supply, and switching applications.
0.17 A, 100V, Rois/ON)=6Q atVGs= 10V
Ros(ON)= 100atVGs=45V
High-Density Cell Design for Low RDs/ON)
Rugged and Reliable
Compact Industry Standard SOT-23 Surface Mount
Package
Very Low Capacitance
Fast Switching Speed
Please send RFQ , we will respond immediately.