BSS123

BSS123 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-BSS123
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: pdf
  • Stock: 4383
  • Description: BSS123 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Supplier Device Package SOT-23-3
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2003
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 6Ohm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Current Rating 170mA
Base Part Number BSS123
Number of Elements 1
Number of Channels 1
Voltage 100V
Power Dissipation-Max 360mW Ta
Element Configuration Single
Current 15A
Power Dissipation 360mW
Turn On Delay Time 1.7 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 73pF @ 25V
Current - Continuous Drain (Id) @ 25°C 170mA Ta
Gate Charge (Qg) (Max) @ Vgs 2.5nC @ 10V
Rise Time 9ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 9 ns
Turn-Off Delay Time 17 ns
Continuous Drain Current (ID) 170mA
Threshold Voltage 1.7V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Dual Supply Voltage 100V
Input Capacitance 73pF
Max Junction Temperature (Tj) 150°C
Drain to Source Resistance 1.2Ohm
Rds On Max 6 Ω
Nominal Vgs 1.7 V
Height 1.11mm
Length 2.92mm
Width 1.3mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

BSS123 Description


ON Semiconductor's patented, high-cell-density DMOS technology is used to make BSS123 N-Channel enhancement mode field effect transistors. These components have been engineered to provide durable, dependable, and rapid switching performance while minimizing onstate resistance. Low voltage, low current applications like as tiny servo motor control, power MOSFET gate drivers, and other switching applications are well suited for these products.



BSS123 Features


RDS(ON) = 6W @ VGS = 10 V @ 0.17 A, 100 V

RDS(ON) = 10W @ 4.5 V VGS

For extremely low RDS, a high-density cell design is used (ON)

Rugged and dependable

SOT-23 surface mount package is a compact industry standard.



BSS123 Applications


Switching applications.


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