Products
Manufacturer
RFQ
NEWS
ContactBSP299L6327HUSA1
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 4Ohm @ 400mA, 10V ±20V 400pF @ 25V 500V TO-261-4, TO-261AA
- Manufacturer: Infineon Technologies
- NO: 376-BSP299L6327HUSA1
- Package: TO-261-4, TO-261AA
- Datasheet:
- Stock: 18135
- Description: MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 4Ohm @ 400mA, 10V ±20V 400pF @ 25V 500V TO-261-4, TO-261AA (Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
.png)
.png)
.png)
.png)
.png)
.png)
.png)
.png)
.png)
You may place an order without registering to Chip Smart.
We strongly suggest you sign in before purchasing as you
can track your order in real time.
For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.
RFQ (Request for Quotations)It is recommended to request for quotations to get the latest
prices and inventories about the part.
Our sales will reply to
your request by email within 24 hours.
1. You'll receive an order information email in your inbox.
(Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some
extent, the sales manager is going to reconfirm the order and let you know if there
are any updates.
Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time
zone and country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Number of Pins | 4 |
| Supplier Device Package | PG-SOT223-4 |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | SIPMOS® |
| Published | 2009 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Technology | MOSFET (Metal Oxide) |
| Number of Elements | 1 |
| Power Dissipation-Max | 1.8W Ta |
| Power Dissipation | 1.8W |
| Turn On Delay Time | 8 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 4Ohm @ 400mA, 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 400pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 400mA Ta |
| Rise Time | 15ns |
| Drain to Source Voltage (Vdss) | 500V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 30 ns |
| Turn-Off Delay Time | 55 ns |
| Continuous Drain Current (ID) | 400mA |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 400pF |
| Rds On Max | 4 Ω |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
