BSP296L6433HTMA1

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 700m Ω @ 1.1A, 10V ±20V 364pF @ 25V 17.2nC @ 10V 100V TO-261-4, TO-261AA


  • Manufacturer: Infineon Technologies
  • NO: 376-BSP296L6433HTMA1
  • Package: TO-261-4, TO-261AA
  • Datasheet: pdf
  • Stock: 4000
  • Description: MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 700m Ω @ 1.1A, 10V ±20V 364pF @ 25V 17.2nC @ 10V 100V TO-261-4, TO-261AA (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.transport

SPECIFICATIONS

Parameters
Vgs (Max) ±20V
Fall Time (Typ) 21.4 ns
Turn-Off Delay Time 37.4 ns
Continuous Drain Current (ID) 1.1A
Gate to Source Voltage (Vgs) 20V
Radiation Hardening No
RoHS Status RoHS Compliant
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2002
Series SIPMOS®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Pin Count 4
Number of Elements 1
Power Dissipation-Max 1.79W Ta
Power Dissipation 1.79W
Turn On Delay Time 5.2 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 700m Ω @ 1.1A, 10V
Vgs(th) (Max) @ Id 1.8V @ 400μA
Input Capacitance (Ciss) (Max) @ Vds 364pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.1A Ta
Gate Charge (Qg) (Max) @ Vgs 17.2nC @ 10V
Rise Time 7.9ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V

In Stock

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