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ContactBSP170PH6327XTSA1
BSP170PH6327XTSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-BSP170PH6327XTSA1
- Package: TO-261-4, TO-261AA
- Datasheet:
- Stock: 8337
- Description: BSP170PH6327XTSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Rise Time | 28ns |
| Drain to Source Voltage (Vdss) | 60V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 60 ns |
| Turn-Off Delay Time | 92 ns |
| Continuous Drain Current (ID) | -1.9A |
| Threshold Voltage | -3V |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | -60V |
| Drain-source On Resistance-Max | 0.3Ohm |
| Drain to Source Breakdown Voltage | -60V |
| Pulsed Drain Current-Max (IDM) | 7.6A |
| Avalanche Energy Rating (Eas) | 70 mJ |
| Height | 1.8mm |
| Length | 6.5mm |
| Width | 3.5mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 10 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Number of Pins | 4 |
| Transistor Element Material | SILICON |
| Manufacturer Package Identifier | PG-SOT223-4 |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 2007 |
| Series | SIPMOS® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Additional Feature | AVALANCHE RATED |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 4 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 1.8W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.8W |
| Case Connection | DRAIN |
| Turn On Delay Time | 14 ns |
| FET Type | P-Channel |
| Rds On (Max) @ Id, Vgs | 300m Ω @ 1.9A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 410pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 1.9A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 14nC @ 10V |
BSP170PH6327XTSA1 Description
BSP170PH6327XTSA1 is a P-channel enhancement mode Field-Effect Transistor (FET). The Infineon BSP170PH6327XTSA1 can be used for logic-level translators, power MOSFET gate drivers, and other switching applications. The transistor BSP170PH6327XTSA1 consistently meets the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. The BSP170PH6327XTSA1 is offered in the SOT-223-4 package. It is specified for operation from –55°C to +150°C.
BSP170PH6327XTSA1 Features
Enhancement mode
Avalanche rated
Fast switching
Dv/dt rated
Pb-free lead-plating
RoHS compliant, Halogen-free
Qualified according to AEC Q101
BSP170PH6327XTSA1 Applications
Power Management Functions
Motor control
On-board charger
DC-DC
Consumer
Logic level translators
Power MOSFET gate drivers
Other switching applications
