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BSP125H6327XTSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-BSP125H6327XTSA1
- Package: TO-261-4, TO-261AA
- Datasheet:
- Stock: 3402
- Description: BSP125H6327XTSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 150pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 120mA Ta |
| Gate Charge (Qg) (Max) @ Vgs | 6.6nC @ 10V |
| Rise Time | 14.4ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 110 ns |
| Turn-Off Delay Time | 20 ns |
| Continuous Drain Current (ID) | 120mA |
| Threshold Voltage | 1.9V |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 600V |
| Drain to Source Breakdown Voltage | 600V |
| Nominal Vgs | 1.9 V |
| Height | 1.5mm |
| Length | 6.5mm |
| Width | 3.5mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 10 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Number of Pins | 4 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 1999 |
| Series | SIPMOS® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Pin Count | 4 |
| Number of Elements | 1 |
| Power Dissipation-Max | 1.8W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.7W |
| Case Connection | DRAIN |
| Turn On Delay Time | 7.7 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 45 Ω @ 120mA, 10V |
| Vgs(th) (Max) @ Id | 2.3V @ 94μA |
BSP125H6327XTSA1 N-Channel MOSFET Description
The BSP125H6327XTSA1 is a small power MOSFET from the BSP125 series SIPMOS? Power Transistor by Infineon. It has a low power dissipation low as 1.8 W and is suitable for a wide range of applications, especially for automotive uses. Its Gate threshold voltage is 1.3 V (minimum) and it has a Drain-to-Source ON-state resistance of 60 ? (maximum).
BSP125H6327XTSA1 N-Channel MOSFET Features
N-Channel
Enhancement mode
Logic Level
Pb-free lead plating; RoHS compliant
Qualified according to AEC Q101
dv/dt rated
Halogen-free according to IEC61249-2-21
BSP125H6327XTSA1 N-Channel MOSFET Applications
Automotive
eMobility
Onboard charger
DC-DC
Motor control
Telecom
Consumer
