BSC520N15NS3GATMA1

BSC520N15NS3GATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi

Manufacturer: Infineon Technologies
NO: 376-BSC520N15NS3GATMA1
Package: 8-PowerTDFN
Datasheet:
Stock: 2510
Description: BSC520N15NS3GATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time	26 Weeks
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Surface Mount	YES
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2003
Series	OptiMOS™
JESD-609 Code	e3
Pbfree Code	no
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Reach Compliance Code	not_compliant
Pin Count	8
JESD-30 Code	R-PDSO-F5
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	57W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	57W
Case Connection	DRAIN
Turn On Delay Time	7 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	52m Ω @ 18A, 10V
Vgs(th) (Max) @ Id	4V @ 35μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	890pF @ 75V
Current - Continuous Drain (Id) @ 25°C	21A Tc
Gate Charge (Qg) (Max) @ Vgs	12nC @ 10V
Rise Time	4ns
Drive Voltage (Max Rds On,Min Rds On)	8V 10V
Vgs (Max)	±20V
Fall Time (Typ)	3 ns
Turn-Off Delay Time	10 ns
Continuous Drain Current (ID)	21A
Threshold Voltage	3V
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.052Ohm
Drain to Source Breakdown Voltage	150V
Avalanche Energy Rating (Eas)	60 mJ
Nominal Vgs	3 V
Height	1.1mm
Length	5.35mm
Width	6.1mm
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free