BSC500N20NS3GATMA1

BSC500N20NS3GATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi

Manufacturer: Infineon Technologies
NO: 376-BSC500N20NS3GATMA1
Package: 8-PowerTDFN
Datasheet:
Stock: 8249
Description: BSC500N20NS3GATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time	26 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
Published	2008
Series	OptiMOS™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PDSO-F5
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	96W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	50m Ω @ 22A, 10V
Vgs(th) (Max) @ Id	4V @ 60μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	1580pF @ 100V
Current - Continuous Drain (Id) @ 25°C	24A Tc
Gate Charge (Qg) (Max) @ Vgs	15nC @ 10V
Rise Time	5ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	24A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	200V
Drain-source On Resistance-Max	0.05Ohm
Pulsed Drain Current-Max (IDM)	97A
Avalanche Energy Rating (Eas)	120 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead