BSC360N15NS3GATMA1

BSC360N15NS3GATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • NO: 376-BSC360N15NS3GATMA1
  • Package: 8-PowerTDFN
  • Datasheet: pdf
  • Stock: 7610
  • Description: BSC360N15NS3GATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series OptiMOS™
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
JESD-30 Code R-PDSO-F5
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 74W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 74W
Case Connection DRAIN
Turn On Delay Time 9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 36m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 45μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1190pF @ 75V
Current - Continuous Drain (Id) @ 25°C 33A Tc
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Rise Time 6ns
Drive Voltage (Max Rds On,Min Rds On) 8V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 12 ns
Continuous Drain Current (ID) 33A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 150V
Drain-source On Resistance-Max 0.036Ohm
Drain to Source Breakdown Voltage 150V
Max Junction Temperature (Tj) 150°C
Height 1.1mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Factory Lead Time 26 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount

BSC360N15NS3GATMA1 Description


A BSC360N15NS3 G OptiMOSTM N-channel Power MOSFET is the best choice for synchronous rectification and high-frequency switching. When compared to the next-best competition, it achieves a 40 percent reduction in RDS (ON) and a 45 percent increase in figure of merit (FOM). This significant advancement opens up new options, such as switching from leaded to SMD packaging or essentially replacing two outdated components with a single OptiMOSTM component.



BSC360N15NS3GATMA1 Features


  • Excellent switching performance

  • World's lowest RDS (ON)

  • Very low Qg and Qgd

  • Excellent gate charge x RDS (ON) product (FOM)

  • MSL1 rated 2

  • Environmentally friendly

  • Increased efficiency

  • Highest power density

  • Less paralleling required

  • Smallest board-space consumption



BSC360N15NS3GATMA1 Applications


  • Power Management

  • Motor Drive & Control

  • Automotive

  • Communications & Networking

  • Audio


In Stock

Please send RFQ , we will respond immediately.