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BSC160N15NS5ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-BSC160N15NS5ATMA1
- Package: 8-PowerTDFN
- Datasheet:
- Stock: 3850
- Description: BSC160N15NS5ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 26 Weeks |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2013 |
| Series | OptiMOS™ |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PDSO-F5 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Number of Channels | 1 |
| Power Dissipation-Max | 96W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 96W |
| Case Connection | DRAIN |
| Turn On Delay Time | 9.6 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 16m Ω @ 28A, 10V |
| Vgs(th) (Max) @ Id | 4.6V @ 60μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1820pF @ 75V |
| Current - Continuous Drain (Id) @ 25°C | 56A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 23.1nC @ 10V |
| Drive Voltage (Max Rds On,Min Rds On) | 8V 10V |
| Vgs (Max) | ±20V |
| Turn-Off Delay Time | 10.8 ns |
| Continuous Drain Current (ID) | 56A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 150V |
| Pulsed Drain Current-Max (IDM) | 224A |
| Avalanche Energy Rating (Eas) | 43 mJ |
| Max Junction Temperature (Tj) | 150°C |
| Height | 1.1mm |
| RoHS Status | ROHS3 Compliant |
BSC160N15NS5ATMA1 Description
The Infineon Technologies BSC160N15NS5ATMA1 is a new OptiMOSTM 5 150 V power MOSFET that is ideal for low voltage drives like forklifts and e-scooters, as well as telecom and solar applications. The new products provide a breakthrough decrease in R DS(on) and Q RR (up to 25% less than the next best choice in SuperSO8) without sacrificing FOM gd and FOM OSS, effectively decreasing design effort while optimizing system efficiency. Furthermore, the extremely low reverse recovery charge (Q RR = 26 nC in SuperSO8) improves commutation toughness.
BSC160N15NS5ATMA1 Features
Lower output charge
Ultra-low reverse recovery charge
Increased commutation ruggedness
Lower RDS(on) without compromising FOMgd and FOMoss
Higher switching frequency possible
BSC160N15NS5ATMA1 Applications
Solar
Low voltage drives
Telecom
