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ContactBSC109N10NS3GATMA1
BSC109N10NS3GATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-BSC109N10NS3GATMA1
- Package: 8-PowerTDFN
- Datasheet:
- Stock: 367
- Description: BSC109N10NS3GATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 26 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| Series | OptiMOS™ |
| JESD-609 Code | e3 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 8 |
| JESD-30 Code | R-PDSO-F5 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 78W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 78W |
| Case Connection | DRAIN |
| Turn On Delay Time | 12 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 10.9m Ω @ 46A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 45μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 2500pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 63A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V |
| Rise Time | 7ns |
| Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 5 ns |
| Turn-Off Delay Time | 19 ns |
| Continuous Drain Current (ID) | 63A |
| Threshold Voltage | 2.7V |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 100V |
| Pulsed Drain Current-Max (IDM) | 252A |
| Avalanche Energy Rating (Eas) | 70 mJ |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead |
BSC109N10NS3GATMA1 Description
BSC109N10NS3GATMA1 is an N-channel Power transistor from the manufacturer Infineon Technologies with a voltage of 100V. The operating temperature of BSC109N10NS3GATMA1 is -55°C~150°C TJ and its maximum power dissipation is 78W. BSC109N10NS3GATMA1 has 8 pins and it is available in Tape & Reel (TR) packaging way. The Turn-On Delay Time of BSC109N10NS3GATMA1 is 12 ns and its Turn-Off Delay Time is 19 ns.
BSC109N10NS3GATMA1 Features
OptiMOS?3 power transistor
Very low gate charge for high-frequency applications
Optimized for DC-DC conversion
P-channel, normal level
Excellent gate charge x RDS(on) product (FOM)
Very low on-resistance RDS(on)
Qualified according to JEDEC for target applications
BSC109N10NS3GATMA1 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
