BSC052N08NS5ATMA1

BSC052N08NS5ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • NO: 376-BSC052N08NS5ATMA1
  • Package: 8-PowerTDFN
  • Datasheet: pdf
  • Stock: 2153
  • Description: BSC052N08NS5ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 26 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Weight 506.605978mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series OptiMOS™
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2.5W Ta 83W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.2m Ω @ 47.5A, 10V
Vgs(th) (Max) @ Id 3.8V @ 49μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 2900pF @ 40V
Current - Continuous Drain (Id) @ 25°C 95A Tc
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Rise Time 7ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 5 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 19A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 80V
Drain-source On Resistance-Max 0.0052Ohm
Drain to Source Breakdown Voltage 80V
Avalanche Energy Rating (Eas) 70 mJ
Max Junction Temperature (Tj) 150°C
Height 1.1mm
RoHS Status ROHS3 Compliant
Lead Free Contains Lead

BSC052N08NS5ATMA1 Description


Due to its sophisticated processing techniques, these International Rectifier P-Channel MOSFETs have an extremely low on-resistance per silicon area. Designers now have a powerful tool to use in load and battery control applications thanks to this benefit. In order to enhance its thermal performance and enable multiple die support, the SO-8 has been developed utilizing a special leadframe, which makes it the ideal option for a variety of power applications. Many devices can now be used thanks to these enhancements, which also greatly reduce the amount of board space needed for an application. The container is designed for use with vapor phase, infrared, or wave soldering.



BSC052N08NS5ATMA1 Features


?Designed for high-performance SMPS, such as sync.


?100% of avalanches were tested


?Excellent heat resistance


?N'cha nnel


?JEDEC1-qualified for the intended applications


?Pb-free lead plating; complies with RoHS


?In accordance with IEC61249-2-21, halogen-free



BSC052N08NS5ATMA1 Applications


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