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ContactBSC047N08NS3GATMA1
BSC047N08NS3GATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-BSC047N08NS3GATMA1
- Package: 8-PowerTDFN
- Datasheet:
- Stock: 9625
- Description: BSC047N08NS3GATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
- Delivery:
- Payment:
In Stock
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| Parameters | |
|---|---|
| Factory Lead Time | 26 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2004 |
| Series | OptiMOS™ |
| JESD-609 Code | e3 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 8 |
| JESD-30 Code | R-PDSO-F5 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 2.5W Ta 125W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 125W |
| Case Connection | DRAIN |
| Turn On Delay Time | 18 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 4.7m Ω @ 50A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 90μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 4800pF @ 40V |
| Current - Continuous Drain (Id) @ 25°C | 18A Ta 100A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 69nC @ 10V |
| Rise Time | 17ns |
| Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 11 ns |
| Turn-Off Delay Time | 44 ns |
| Continuous Drain Current (ID) | 18A |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 80V |
| Drain-source On Resistance-Max | 0.0047Ohm |
| Pulsed Drain Current-Max (IDM) | 400A |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead |
This BSC047N08NS3GATMA1 power MOSFET from Infineon Technologies can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 2500 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with optimos technology. This N channel MOSFET transistor operates in enhancement mode.
BSC047N08NS3GATMA1 Features
● Ideal for high frequency switching and sync. rec.
● Optimized technology for DC/DC converters
● Excellent gate charge x RDS(on) product (FOM)
● Very low on-resistance RDS(on)
● Superior thermal resistance
● N-channel, normal level
● 100% avalanche tested
● Pb-free plating; RoHS compliant
● Qualified according to JEDEC for target applications
● Halogen-free according to IEC61249-2-21
BSC047N08NS3GATMA1 Applications
● Solar
● Consumer
● Telecom
● Server
● PC power
● DC-DC
● AC-DC
● Adapter
● SMPS
● LED
● Motor control
