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MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 2.8m Ω @ 50A, 10V ±20V 2700pF @ 30V 37nC @ 10V 8-PowerTDFN
- Manufacturer: Infineon Technologies
- NO: 376-BSC028N06NSATMA1
- Package: 8-PowerTDFN
- Datasheet:
- Stock: 7392
- Description: MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 2.8m Ω @ 50A, 10V ±20V 2700pF @ 30V 37nC @ 10V 8-PowerTDFN (Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 26 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 2012 |
| Series | OptiMOS™ |
| JESD-609 Code | e3 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 8 |
| JESD-30 Code | R-PDSO-F5 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 2.5W Ta 83W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 83W |
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 2.8m Ω @ 50A, 10V |
| Vgs(th) (Max) @ Id | 2.8V @ 50μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 2700pF @ 30V |
| Current - Continuous Drain (Id) @ 25°C | 23A Ta 100A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 37nC @ 10V |
| Rise Time | 38ns |
| Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 8 ns |
| Turn-Off Delay Time | 19 ns |
| Continuous Drain Current (ID) | 100A |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 60V |
| Drain Current-Max (Abs) (ID) | 23A |
| Drain to Source Breakdown Voltage | 60V |
| Pulsed Drain Current-Max (IDM) | 400A |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead |
BSC028N06NSATMA1 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2700pF @ 30V.This device has a continuous drain current (ID) of [100A], which is its maximum continuous current.In this device, the drain-source breakdown voltage is 60V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 23A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 19 ns.A maximum pulsed drain current of 400A is the maximum peak drain current rated for this device.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.With its 60V power supply, it is capable of handling a dual voltage maximum.Using drive voltage (6V 10V), this device helps reduce its power consumption.
BSC028N06NSATMA1 Features
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 19 ns
based on its rated peak drain current 400A.
BSC028N06NSATMA1 Applications
There are a lot of Infineon Technologies BSC028N06NSATMA1 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Industrial Power Supplies
- Micro Solar Inverter
- LCD/LED TV
- DC-to-DC converters
- LCD/LED/ PDP TV Lighting
- Battery Protection Circuit
- Lighting
- Synchronous Rectification
- Server power supplies
