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ContactBSC028N06LS3GATMA1
BSC028N06LS3GATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-BSC028N06LS3GATMA1
- Package: 8-PowerTDFN
- Datasheet:
- Stock: 6647
- Description: BSC028N06LS3GATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 26 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| Series | OptiMOS™ |
| JESD-609 Code | e3 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Pin Count | 8 |
| JESD-30 Code | R-PDSO-F5 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Number of Channels | 1 |
| Power Dissipation-Max | 2.5W Ta 139W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.5W |
| Case Connection | DRAIN |
| Turn On Delay Time | 19 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 2.8m Ω @ 50A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 93μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 13000pF @ 30V |
| Current - Continuous Drain (Id) @ 25°C | 23A Ta 100A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 175nC @ 10V |
| Rise Time | 17ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Turn-Off Delay Time | 77 ns |
| Continuous Drain Current (ID) | 23A |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 60V |
| Drain to Source Breakdown Voltage | 60V |
| Pulsed Drain Current-Max (IDM) | 400A |
| Max Junction Temperature (Tj) | 150°C |
| Height | 1.1mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead |
Description
The 60V N-channel Power MOSFET BSC028N06LS3GATMA1 is designed for synchronous rectification in switched-mode power supplies (SMPS), which are used in devices including servers, desktop computers, and tablet chargers. Compared to competing devices, the MOSFET has a 40% reduced RDS (on). High system efficiency and power density are made possible by the significantly decreased gate and output charges. In high-frequency switching and DC-DC converters, the OptiMOSTM power MOSFET excels.
Features
Highest system efficiency
Less paralleling required
Increased power density
Saving space
Very low voltage overshoot
Superior thermal resistance
Ideal for high frequency switching and sync. rec.
Optimized technology for DC/DC converters
Excellent gate charge x RDS(on) product (FOM)
Very low on-resistance RDS(on)
Superior thermal resistance
N-channel, logic level
100% avalanche tested
Pb-free plating; RoHS compliant
Qualified according to JEDEC for target applications
Halogen-free according to IEC61249-2-21
Applications
Power Management
Alternative Energy
Motor Drive & Control
Industrial
Small motor control
