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BSC010NE2LSIATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-BSC010NE2LSIATMA1
- Package: 8-PowerTDFN
- Datasheet:
- Stock: 2186
- Description: BSC010NE2LSIATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Rise Time | 6.2ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Continuous Drain Current (ID) | 38A |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 25V |
| Pulsed Drain Current-Max (IDM) | 400A |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead |
| Factory Lead Time | 26 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Number of Pins | 8 |
| Packaging | Tape & Reel (TR) |
| Published | 2013 |
| Series | OptiMOS™ |
| JESD-609 Code | e3 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 8 |
| JESD-30 Code | R-PDSO-F5 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 2.5W Ta 96W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.5W |
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 1.05m Ω @ 30A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 4200pF @ 12V |
| Current - Continuous Drain (Id) @ 25°C | 38A Ta 100A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 59nC @ 10V |
BSC010NE2LSIATMA1 Description
The BSC010NE2LSIATMA1 is an N-channel Power MOSFET that features reduced power losses and increased efficiency for all load conditions. With the new OptiMOS? 25V product family, Infineon sets new standards in power density and energy efficiency, and system in package. Ultra low gate and output charge, together with the lowest ON-state resistance in small footprint packages, make OptiMOS? 25V the best choice for the demanding requirements of voltage regulator solution applications. BSC010NE2LSI is an N-channel power MOSFET with reduced power losses and higher efficiency under all load conditions. With its low gate and output charge and lowest ON-state resistance, OptiMOSTM 25V is the ideal voltage regulator solution material for applications requiring a small footprint.
BSC010NE2LSIATMA1 Features
Verylowon-resistance(on)@VGS=4.5V
100%avalanchetested
N-channel
Pb-freeleadplating;RoHS-compliant
OptimizedforhighperformanceBuckconverter
MonolithicintegratedSchottkylikediode
QualifiedaccordingtoJEDEC1)for target applications
Halogen-freeaccordingtoIEC61249-2-21
BSC010NE2LSIATMA1 Applications
LED
Onboard charger
Mainboard
Notebook
DC-DC
VRD/VRM
Motor control
