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BSC010N04LSIATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-BSC010N04LSIATMA1
- Package: 8-PowerTDFN
- Datasheet:
- Stock: 2006
- Description: BSC010N04LSIATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 39 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2012 |
| Series | OptiMOS™ |
| JESD-609 Code | e3 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | ULTRA LOW RESISTANCE |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 8 |
| JESD-30 Code | R-PDSO-F3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 2.5W Ta 139W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.5W |
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 1.05m Ω @ 50A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 6200pF @ 20V |
| Current - Continuous Drain (Id) @ 25°C | 37A Ta 100A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 87nC @ 10V |
| Rise Time | 48ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 17 ns |
| Turn-Off Delay Time | 72 ns |
| Continuous Drain Current (ID) | 100A |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 40V |
| Drain Current-Max (Abs) (ID) | 37A |
| Drain to Source Breakdown Voltage | 40V |
| Pulsed Drain Current-Max (IDM) | 400A |
| Avalanche Energy Rating (Eas) | 230 mJ |
| FET Feature | Schottky Diode (Body) |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead |
BSC010N04LSIATMA1 Description
The new 40V and 60V product families BSC010N04LSIATMA1 not only have the lowest R DS (conduction) in the industry, but also have perfect switching behavior for fast switching applications. Compared with alternative devices, advanced wafer technology achieves 15% lower RDS (ON) and 31% quality factor (RDS (ON) x Qg) than alternative devices.
BSC010N04LSIATMA1 Features
·Optimized for synchronous rectification Integrated monolithic Schottky-like diode
·Very low on-resistance Ros(on)100% avalanche tested
·N-channel,logic level
Qualified according to JEDEC1for target applications Pb-freeleadpating:RoHScompliant
·Halogen-free accordingtolEC61249-2-21
·Higher solder joint reliability due to enlarged source interconnection
BSC010N04LSIATMA1 Applications
fast switching applications
advanced wafer technology
