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BSC009NE2LS5ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-BSC009NE2LS5ATMA1
- Package: 8-PowerTDFN
- Datasheet:
- Stock: 9152
- Description: BSC009NE2LS5ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead |
| Factory Lead Time | 26 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2013 |
| Series | OptiMOS™ |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PDSO-F5 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 2.5W Ta 74W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Turn On Delay Time | 10 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 0.9m Ω @ 30A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 3900pF @ 12V |
| Current - Continuous Drain (Id) @ 25°C | 41A Ta 100A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 57nC @ 10V |
| Rise Time | 33ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±16V |
| Fall Time (Typ) | 19 ns |
| Turn-Off Delay Time | 48 ns |
| Continuous Drain Current (ID) | 100A |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 25V |
| Drain Current-Max (Abs) (ID) | 41A |
| Drain-source On Resistance-Max | 0.00125Ohm |
| Pulsed Drain Current-Max (IDM) | 400A |
| Avalanche Energy Rating (Eas) | 90 mJ |
BSC009NE2LS5ATMA1 Description
BSC009NE2LS5ATMA1 is a 25V OptiMOSTM5 Power-MOSFET. The Infineon BSC009NE2LS5ATMA1 can be applied in Desktop and server, Single-phase and multiphase POL, CPU/GPU VR in notebooks, High power density voltage regulator, Or-ing, and E-fuse. The Operating and Storage Temperature Range is between -55 and 150℃. And the Transistor BSC009NE2LS5ATMA1 is in the TDSON-8 package with 74W power dissipation.
BSC009NE2LS5ATMA1 Features
Best-in-class on-state resistance
Benchmark switching performance (lowest figure of merits Ron x Qg and Ron x Qgd)
RoHS compliant and halogen-free
Optimized EMI behavior (integrated damping network)
Highest efficiency
Highest power density with S3O8 or Power Block package
BSC009NE2LS5ATMA1 Applications
Desktop and server
Single-phase and multiphase POL
CPU/GPU VR in notebooks
High power density voltage regulator
Or-ing
E-fuse
