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MOSFET (Metal Oxide) N-Channel Bulk 5 Ω @ 200mA, 10V ±20V 60pF @ 10V TO-226-3, TO-92-3 (TO-226AA)
- Manufacturer: Diodes Incorporated
- NO: 233-BS170P
- Package: TO-226-3, TO-92-3 (TO-226AA)
- Datasheet:
- Stock: 9542
- Description: MOSFET (Metal Oxide) N-Channel Bulk 5 Ω @ 200mA, 10V ±20V 60pF @ 10V TO-226-3, TO-92-3 (TO-226AA) (Kg)
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| Parameters | |
|---|---|
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 17 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount, Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Number of Pins | 3 |
| Weight | 453.59237mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| Published | 1997 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 5Ohm |
| Voltage - Rated DC | 60V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | WIRE |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 270mA |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 625mW Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 625mW |
| Turn On Delay Time | 10 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 5 Ω @ 200mA, 10V |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 60pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 270mA Ta |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Turn-Off Delay Time | 10 ns |
| Continuous Drain Current (ID) | 270mA |
| Threshold Voltage | 3V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 0.27A |
| Drain to Source Breakdown Voltage | 60V |
| Nominal Vgs | 3 V |
| Height | 1.1mm |
| Length | 3mm |
| Width | 1.4mm |
| REACH SVHC | No SVHC |
BS170P Overview
A device's maximum input capacitance is 60pF @ 10V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 270mA for this device. Drain current refers to the capacity of the device to conduct continuous current.A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 60V, and this device has a drainage-to-source breakdown voltage of 60VV.0.27A is the drain current of this device, which is the maximum continuous current transistor can carry.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 10 ns.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 10 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 3V.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
BS170P Features
a continuous drain current (ID) of 270mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 10 ns
a threshold voltage of 3V
BS170P Applications
There are a lot of Diodes Incorporated BS170P applications of single MOSFETs transistors.
- Telecom 1 Sever Power Supplies
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- Motor control
- PFC stages, hard switching PWM stages and resonant switching
- Motor drives and Uninterruptible Power Supplies
- Power Management Functions
- DC/DC converters
- Load switching
- Server power supplies
