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BS170-D75Z
  • BS170-D75Z

BS170-D75Z

MOSFET (Metal Oxide) N-Channel Tape & Box (TB) 5 Ω @ 200mA, 10V ±20V 40pF @ 10V 60V TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)


  • Manufacturer: ON Semiconductor
  • NO: 598-BS170-D75Z
  • Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Datasheet: pdf
  • Stock: 8440
  • Description: MOSFET (Metal Oxide) N-Channel Tape & Box (TB) 5 Ω @ 200mA, 10V ±20V 40pF @ 10V 60V TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) (Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 11 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Box (TB)
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BS170
JESD-30 Code O-PBCY-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 830mW Ta
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5 Ω @ 200mA, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 40pF @ 10V
Current - Continuous Drain (Id) @ 25°C 500mA Ta
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 0.5A
Drain-source On Resistance-Max 5Ohm
DS Breakdown Voltage-Min 60V
Feedback Cap-Max (Crss) 10 pF
RoHS Status ROHS3 Compliant

BS170-D75Z Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 40pF @ 10V.0.5A is the drain current of this device, which is the maximum continuous current transistor can carry.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 60V.Operating this transistor requires a 60V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

BS170-D75Z Features


a 60V drain to source voltage (Vdss)

BS170-D75Z Applications


There are a lot of ON Semiconductor BS170-D75Z applications of single MOSFETs transistors.

  • DC-to-DC converters
  • General Purpose Interfacing Switch
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Load switching
  • LCD/LED/ PDP TV Lighting
  • Consumer Appliances
  • Motor drives and Uninterruptible Power Supplies
  • Power Management Functions
  • Motor control
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