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MOSFET (Metal Oxide) N-Channel Tape & Box (TB) 5 Ω @ 200mA, 10V ±20V 40pF @ 10V 60V TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Manufacturer: ON Semiconductor
- NO: 598-BS170-D74Z
- Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet:
- Stock: 1753
- Description: MOSFET (Metal Oxide) N-Channel Tape & Box (TB) 5 Ω @ 200mA, 10V ±20V 40pF @ 10V 60V TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) (Kg)
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| Parameters | |
|---|---|
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Box (TB) |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | BOTTOM |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | BS170 |
| JESD-30 Code | O-PBCY-T3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 830mW Ta |
| Operating Mode | ENHANCEMENT MODE |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 5 Ω @ 200mA, 10V |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 40pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 500mA Ta |
| Drain to Source Voltage (Vdss) | 60V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain Current-Max (Abs) (ID) | 0.5A |
| Drain-source On Resistance-Max | 5Ohm |
| DS Breakdown Voltage-Min | 60V |
| Feedback Cap-Max (Crss) | 10 pF |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 11 Weeks |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Surface Mount | NO |
BS170-D74Z Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 40pF @ 10V.Drain current refers to the maximum continuous current a device can conduct, and it is 0.5A.For normal operation, maintain the DS breakdown voltage above 60V.This transistor requires a 60V drain to source voltage (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
BS170-D74Z Features
a 60V drain to source voltage (Vdss)
BS170-D74Z Applications
There are a lot of ON Semiconductor BS170-D74Z applications of single MOSFETs transistors.
- DC-to-DC converters
- Micro Solar Inverter
- Industrial Power Supplies
- Motor control
- Lighting
- LCD/LED TV
- AC-DC Power Supply
- Uninterruptible Power Supply
- DC/DC converters
- LCD/LED/ PDP TV Lighting
