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MOSFET (Metal Oxide) N-Channel Bulk 5Ohm @ 200mA, 10V ±20V 40pF @ 10V 60V TO-226-3, TO-92-3 (TO-226AA)
- Manufacturer: ON Semiconductor
- NO: 598-BS170
- Package: TO-226-3, TO-92-3 (TO-226AA)
- Datasheet:
- Stock: 6343
- Description: MOSFET (Metal Oxide) N-Channel Bulk 5Ohm @ 200mA, 10V ±20V 40pF @ 10V 60V TO-226-3, TO-92-3 (TO-226AA) (Kg)
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| Parameters | |
|---|---|
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Contact Plating | Copper, Silver, Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Number of Pins | 3 |
| Supplier Device Package | TO-92-3 |
| Weight | 4.535924g |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| Published | 2005 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Resistance | 5Ohm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Voltage - Rated DC | 60V |
| Technology | MOSFET (Metal Oxide) |
| Current Rating | 500mA |
| Base Part Number | BS170 |
| Number of Elements | 1 |
| Voltage | 60V |
| Power Dissipation-Max | 830mW Ta |
| Element Configuration | Single |
| Current | 5A |
| Power Dissipation | 830mW |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 5Ohm @ 200mA, 10V |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 40pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 500mA Ta |
| Drain to Source Voltage (Vdss) | 60V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Continuous Drain Current (ID) | 500mA |
| Threshold Voltage | 2.1V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 60V |
| Input Capacitance | 24pF |
| Drain to Source Resistance | 5Ohm |
| Rds On Max | 5 Ω |
| Nominal Vgs | 2.1 V |
| Height | 5.33mm |
| Length | 5.2mm |
| Width | 4.19mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 11 Weeks |
BS170 Description
These BS170 N-channel enhanced mode field effect transistors are produced using ONSemi's proprietary high cell density DMOS technology. These products are designed to minimize-state resistance while providing rugged, reliable and fast switching performance. They can be used in most applications that require up to 500 mA DC. These products are particularly suitable for low-voltage, low-current applications such as small servo motor controls, power MOSFET gate drivers and other switching applications.
BS170 Features
? High Density Cell Design for Low RDS(ON)
? Voltage Controlled Small Signal Switch
? Rugged and Reliable
? High Saturation Current Capability
? These are Pb?Free Devices
BS170 Applications
small servo motor controls
power MOSFET gate drivers
other switching applications
