BFL4001

MOSFET (Metal Oxide) N-Channel Bulk 2.7 Ω @ 3.25A, 10V ±30V 850pF @ 30V 44nC @ 10V TO-220-3 Full Pack


  • Manufacturer: ON Semiconductor
  • NO: 598-BFL4001
  • Package: TO-220-3 Full Pack
  • Datasheet: pdf
  • Stock: 5716
  • Description: MOSFET (Metal Oxide) N-Channel Bulk 2.7 Ω @ 3.25A, 10V ±30V 850pF @ 30V 44nC @ 10V TO-220-3 Full Pack (Kg)

Quantity:


  • Delivery: Delivery
  • Payment: payment

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.transport

SPECIFICATIONS

Parameters
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2010
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
Technology MOSFET (Metal Oxide)
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 2W Ta 37W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.7 Ω @ 3.25A, 10V
Input Capacitance (Ciss) (Max) @ Vds 850pF @ 30V
Current - Continuous Drain (Id) @ 25°C 4.1A Ta
Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 4.1A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 6.5A
Drain to Source Breakdown Voltage 900V
RoHS Status RoHS Compliant

In Stock

Please send RFQ , we will respond immediately.