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MOSFET (Metal Oxide) N-Channel Tube 27m Ω @ 25A, 10V ±16V 1700pF @ 25V 48nC @ 5V 55V TO-251-3 Short Leads, IPak, TO-251AA
- Manufacturer: Infineon Technologies
- NO: 376-AUIRLU2905
- Package: TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet:
- Stock: 5700
- Description: MOSFET (Metal Oxide) N-Channel Tube 27m Ω @ 25A, 10V ±16V 1700pF @ 25V 48nC @ 5V 55V TO-251-3 Short Leads, IPak, TO-251AA (Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 8 Weeks |
| Mounting Type | Through Hole |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Surface Mount | NO |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2000 |
| Series | HEXFET® |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Additional Feature | AVALANCHE RATED |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Reference Standard | AEC-Q101 |
| JESD-30 Code | R-PSIP-T3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 110W Tc |
| Operating Mode | ENHANCEMENT MODE |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 27m Ω @ 25A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1700pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 42A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 48nC @ 5V |
| Drain to Source Voltage (Vdss) | 55V |
| Drive Voltage (Max Rds On,Min Rds On) | 4V 10V |
| Vgs (Max) | ±16V |
| Drain Current-Max (Abs) (ID) | 42A |
| Drain-source On Resistance-Max | 0.03Ohm |
| Pulsed Drain Current-Max (IDM) | 160A |
| DS Breakdown Voltage-Min | 55V |
| Avalanche Energy Rating (Eas) | 210 mJ |
| RoHS Status | RoHS Compliant |
