AUIRL1404S

MOSFET (Metal Oxide) N-Channel Tube 4m Ω @ 95A, 10V ±20V 6600pF @ 25V 140nC @ 5V TO-252-3, DPak (2 Leads + Tab), SC-63


  • Manufacturer: Infineon Technologies
  • NO: 376-AUIRL1404S
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: pdf
  • Stock: 2704
  • Description: MOSFET (Metal Oxide) N-Channel Tube 4m Ω @ 95A, 10V ±20V 6600pF @ 25V 140nC @ 5V TO-252-3, DPak (2 Leads + Tab), SC-63 (Kg)

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SPECIFICATIONS

Parameters
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 3.8W Ta 200W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.8W
Case Connection DRAIN
Turn On Delay Time 18 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4m Ω @ 95A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6600pF @ 25V
Current - Continuous Drain (Id) @ 25°C 160A Tc
Gate Charge (Qg) (Max) @ Vgs 140nC @ 5V
Rise Time 270ns
Drive Voltage (Max Rds On,Min Rds On) 4.3V 10V
Vgs (Max) ±20V
Fall Time (Typ) 130 ns
Turn-Off Delay Time 38 ns
Continuous Drain Current (ID) 160A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.004Ohm
Drain to Source Breakdown Voltage 40V
Pulsed Drain Current-Max (IDM) 640A
Avalanche Energy Rating (Eas) 520 mJ
Height 4.83mm
Length 10.67mm
Width 9.65mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
Factory Lead Time 13 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series HEXFET®
Published 2010
JESD-609 Code e3

In Stock

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