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AUIRFS4127 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-AUIRFS4127
- Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet:
- Stock: 8704
- Description: AUIRFS4127 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 16 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2015 |
| Series | Automotive, AEC-Q101, HEXFET® |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Additional Feature | FAST SWITCHING, ULTRA-LOW RESISTANCE |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 375W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 375mW |
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 22m Ω @ 44A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 5380pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 72A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 150nC @ 10V |
| Drain to Source Voltage (Vdss) | 200V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Continuous Drain Current (ID) | 72A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 0.022Ohm |
| DS Breakdown Voltage-Min | 200V |
| Avalanche Energy Rating (Eas) | 250 mJ |
| RoHS Status | ROHS3 Compliant |
AUIRFS4127 Description
The AUIRFS4127 transistor from Infineon Technologies is a HEXFET? Power MOSFET that employs cutting-edge processing techniques to provide extraordinarily low on-resistance per silicon area. This design also has a 175°C junction operating temperature, a quick switching speed, and an increased repeating avalanche rating.
AUIRFS4127 Features
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Advanced Process Technology
Ultra-Low On-Resistance
AUIRFS4127 Applications
Automotive applications and a wide variety of other applications
