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AUIRFR5305 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-AUIRFR5305
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 6849
- Description: AUIRFR5305 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| JEDEC-95 Code | TO-252AA |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | -55V |
| Avalanche Energy Rating (Eas) | 280 mJ |
| Height | 2.39mm |
| Length | 6.73mm |
| Width | 6.22mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 26 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2006 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Resistance | 65MOhm |
| Additional Feature | AVALANCHE RATED |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Power Dissipation-Max | 110W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 110W |
| Case Connection | DRAIN |
| Turn On Delay Time | 14 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 65m Ω @ 16A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1200pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 31A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 63nC @ 10V |
| Rise Time | 66ns |
| Drain to Source Voltage (Vdss) | 55V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 63 ns |
| Turn-Off Delay Time | 39 ns |
| Continuous Drain Current (ID) | 31A |
| Threshold Voltage | -2V |
AUIRFR5305 Description
The AUIRFR5305, a HEXFET? Power MOSFET Cellular Planar design, employs cutting-edge processing techniques to provide low on-resistance per silicon area.
AUIRFR5305 Features
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Advanced Planar Technology
Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
AUIRFR5305 Applications
Automotive applications
