AUIRF4905STRL

AUIRF4905STRL datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • NO: 376-AUIRF4905STRL
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: pdf
  • Stock: 6794
  • Description: AUIRF4905STRL datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 16 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series Automotive, AEC-Q101, HEXFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 200W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 17W
Case Connection DRAIN
Turn On Delay Time 20 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 20m Ω @ 42A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3500pF @ 25V
Current - Continuous Drain (Id) @ 25°C 42A Tc
Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V
Rise Time 99ns
Drain to Source Voltage (Vdss) 55V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 64 ns
Turn-Off Delay Time 51 ns
Continuous Drain Current (ID) 42A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.02Ohm
Drain to Source Breakdown Voltage -55V
Pulsed Drain Current-Max (IDM) 280A
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

AUIRF4905STRL Description


This cellular architecture of HEXFET? Power MOSFETs, specifically created for automotive applications, makes use of cutting-edge manufacturing processes to provide low on-resistance per silicon area. This feature gives the designer an incredibly efficient and dependable device for use in automotive and a wide range of other applications, in addition to the quick switching speed and ruggedized device architecture that HEXFET power MOSFETs are well known for.



AUIRF4905STRL Features


  • Advanced Planar Technology

  • P-Channel MOSFET

  • Low On-Resistance

  • 150??C Operating Temperature

  • Fast Switching

  • Repetitive Avalanche Allowed up to Tjmax

  • Lead-Free, RoHS Compliant

  • Automotive Qualified 



AUIRF4905STRL Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


In Stock

Please send RFQ , we will respond immediately.