AUIRF1324WL

AUIRF1324WL datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • NO: 376-AUIRF1324WL
  • Package: TO-262-3 Wide Leads
  • Datasheet: pdf
  • Stock: 8074
  • Description: AUIRF1324WL datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Mounting Type Through Hole
Package / Case TO-262-3 Wide Leads
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2011
Series HEXFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 300W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Turn On Delay Time 18 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.3m Ω @ 195A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 7630pF @ 19V
Current - Continuous Drain (Id) @ 25°C 240A Tc
Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V
Rise Time 200ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 110 ns
Turn-Off Delay Time 75 ns
Continuous Drain Current (ID) 240A
Threshold Voltage 2V
JEDEC-95 Code TO-262AA
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 24V
Nominal Vgs 2 V
Height 11.3mm
Length 10.67mm
Width 4.83mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Factory Lead Time 16 Weeks
Contact Plating Tin
Mount Through Hole

AUIRF1324WL  Description

 

This  AUIRF1324WL  designed for automotive applications has the advantages of a lead resistance reduction of more than 50% and a RDS (on) reduction of more than 20% compared with traditional TO-262 packages with the same silicon chip. To a large extent, this helps to reduce conditional loss, achieve higher current levels, or make the system run colder and improve efficiency. Other features of the design include a 175 °C junction operating temperature, fast switching speed and an improved repeated avalanche rating. Together, these functions make this design an extremely efficient and reliable device used in automobiles and other applications.



AUIRF1324WL  Features


 Advanced Process Technology

 Ultra Low On-Resistance

 50% Lower Lead Resistance

 175°C Operating Temperature

 Fast Switching

 Repetitive Avalanche Allowed up to Tjmax

 Lead-Free, RoHS Compliant

 Automotive Qualified

 

AUIRF1324WL Applications

 

Battery Switch


In Stock

Please send RFQ , we will respond immediately.