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The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Mounting Type | Through Hole |
| Package / Case | TO-262-3 Wide Leads |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2011 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Number of Elements | 1 |
| Power Dissipation-Max | 300W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 300W |
| Turn On Delay Time | 18 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 1.3m Ω @ 195A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 7630pF @ 19V |
| Current - Continuous Drain (Id) @ 25°C | 240A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 180nC @ 10V |
| Rise Time | 200ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 110 ns |
| Turn-Off Delay Time | 75 ns |
| Continuous Drain Current (ID) | 240A |
| Threshold Voltage | 2V |
| JEDEC-95 Code | TO-262AA |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 24V |
| Nominal Vgs | 2 V |
| Height | 11.3mm |
| Length | 10.67mm |
| Width | 4.83mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 16 Weeks |
| Contact Plating | Tin |
| Mount | Through Hole |
This AUIRF1324WL designed for automotive applications has the advantages of a lead resistance reduction of more than 50% and a RDS (on) reduction of more than 20% compared with traditional TO-262 packages with the same silicon chip. To a large extent, this helps to reduce conditional loss, achieve higher current levels, or make the system run colder and improve efficiency. Other features of the design include a 175 °C junction operating temperature, fast switching speed and an improved repeated avalanche rating. Together, these functions make this design an extremely efficient and reliable device used in automobiles and other applications.
Advanced Process Technology
Ultra Low On-Resistance
50% Lower Lead Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified
Battery Switch
Please send RFQ , we will respond immediately.