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ContactAPTM20UM09SG
MOSFET (Metal Oxide) N-Channel Bulk 9m Ω @ 74.5A, 10V ±30V 12300pF @ 25V 217nC @ 10V 200V J3 Module
- Manufacturer: Microsemi Corporation
- NO: 523-APTM20UM09SG
- Package: J3 Module
- Datasheet:
- Stock: 10166
- Description: MOSFET (Metal Oxide) N-Channel Bulk 9m Ω @ 74.5A, 10V ±30V 12300pF @ 25V 217nC @ 10V 200V J3 Module (Kg)
- Delivery:
- Payment:
In Stock
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Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
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| Parameters | |
|---|---|
| Drain to Source Voltage (Vdss) | 200V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Continuous Drain Current (ID) | 195A |
| Drain-source On Resistance-Max | 0.009Ohm |
| Pulsed Drain Current-Max (IDM) | 780A |
| DS Breakdown Voltage-Min | 200V |
| Avalanche Energy Rating (Eas) | 1300 mJ |
| RoHS Status | RoHS Compliant |
| Mount | Chassis Mount |
| Mounting Type | Chassis Mount |
| Package / Case | J3 Module |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Bulk |
| Published | 2004 |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | TIN SILVER COPPER |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | UPPER |
| Terminal Form | UNSPECIFIED |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-XUFM-X4 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE AND RESISTOR |
| Power Dissipation-Max | 780W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | ISOLATED |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 9m Ω @ 74.5A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 4mA |
| Input Capacitance (Ciss) (Max) @ Vds | 12300pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 195A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 217nC @ 10V |
