APTM120U10DAG

MOSFET (Metal Oxide) N-Channel Bulk 120m Ω @ 58A, 10V ±30V 28900pF @ 25V 1100nC @ 10V 1200V SP6


  • Manufacturer: Microsemi Corporation
  • NO: 523-APTM120U10DAG
  • Package: SP6
  • Datasheet: pdf
  • Stock: 16523
  • Description: MOSFET (Metal Oxide) N-Channel Bulk 120m Ω @ 58A, 10V ±30V 28900pF @ 25V 1100nC @ 10V 1200V SP6 (Kg)

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Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.transport

SPECIFICATIONS

Parameters
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP6
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Bulk
Published 2008
JESD-609 Code e1
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Terminal Finish TIN SILVER COPPER
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 5
JESD-30 Code R-XUFM-X5
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3290W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 120m Ω @ 58A, 10V
Vgs(th) (Max) @ Id 5V @ 20mA
Input Capacitance (Ciss) (Max) @ Vds 28900pF @ 25V
Current - Continuous Drain (Id) @ 25°C 160A Tc
Gate Charge (Qg) (Max) @ Vgs 1100nC @ 10V
Drain to Source Voltage (Vdss) 1200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 116A
Gate to Source Voltage (Vgs) 30V
Avalanche Energy Rating (Eas) 3200 mJ
RoHS Status RoHS Compliant

In Stock

Please send RFQ , we will respond immediately.