Products
Manufacturer
RFQ
NEWS
ContactAPTM100U13SG
MOSFET (Metal Oxide) N-Channel Bulk 145m Ω @ 32.5A, 10V ±30V 31600pF @ 25V 2000nC @ 10V 1000V J3 Module
- Manufacturer: Microsemi Corporation
- NO: 523-APTM100U13SG
- Package: J3 Module
- Datasheet:
- Stock: 13018
- Description: MOSFET (Metal Oxide) N-Channel Bulk 145m Ω @ 32.5A, 10V ±30V 31600pF @ 25V 2000nC @ 10V 1000V J3 Module (Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
.png)
.png)
.png)
.png)
.png)
.png)
.png)
.png)
.png)
You may place an order without registering to Chip Smart.
We strongly suggest you sign in before purchasing as you
can track your order in real time.
For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.
RFQ (Request for Quotations)It is recommended to request for quotations to get the latest
prices and inventories about the part.
Our sales will reply to
your request by email within 24 hours.
1. You'll receive an order information email in your inbox.
(Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some
extent, the sales manager is going to reconfirm the order and let you know if there
are any updates.
Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time
zone and country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Mount | Chassis Mount |
| Mounting Type | Chassis Mount |
| Package / Case | J3 Module |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Bulk |
| Published | 2005 |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| Terminal Finish | TIN SILVER COPPER |
| Additional Feature | AVALANCHE RATED |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | UPPER |
| Terminal Form | UNSPECIFIED |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | unknown |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 4 |
| JESD-30 Code | R-XUFM-X4 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE AND RESISTOR |
| Power Dissipation-Max | 1250W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | ISOLATED |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 145m Ω @ 32.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 10mA |
| Input Capacitance (Ciss) (Max) @ Vds | 31600pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 65A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 2000nC @ 10V |
| Drain to Source Voltage (Vdss) | 1000V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Continuous Drain Current (ID) | 65A |
| Drain-source On Resistance-Max | 0.145Ohm |
| Pulsed Drain Current-Max (IDM) | 260A |
| DS Breakdown Voltage-Min | 1000V |
| Avalanche Energy Rating (Eas) | 2500 mJ |
| RoHS Status | RoHS Compliant |
