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ContactAPT80SM120B
SiCFET (Silicon Carbide) N-Channel Bulk 55m Ω @ 40A, 20V +25V, -10V 235nC @ 20V 1200V TO-247-3
- Manufacturer: Microsemi Corporation
- NO: 523-APT80SM120B
- Package: TO-247-3
- Datasheet:
- Stock: 11435
- Description: SiCFET (Silicon Carbide) N-Channel Bulk 55m Ω @ 40A, 20V +25V, -10V 235nC @ 20V 1200V TO-247-3 (Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
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Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time
zone and country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Factory Lead Time | 22 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Bulk |
| Published | 1997 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Technology | SiCFET (Silicon Carbide) |
| Power Dissipation-Max | 555W Tc |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 55m Ω @ 40A, 20V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Current - Continuous Drain (Id) @ 25°C | 80A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 235nC @ 20V |
| Drain to Source Voltage (Vdss) | 1200V |
| Drive Voltage (Max Rds On,Min Rds On) | 20V |
| Vgs (Max) | +25V, -10V |
| Continuous Drain Current (ID) | 80A |
| RoHS Status | RoHS Compliant |
