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ContactAPT60M75JVFR
MOSFET (Metal Oxide) N-Channel Tube 75m Ω @ 31A, 10V ±30V 19800pF @ 25V 1050nC @ 10V SOT-227-4, miniBLOC
- Manufacturer: Microsemi Corporation
- NO: 523-APT60M75JVFR
- Package: SOT-227-4, miniBLOC
- Datasheet:
- Stock: 16658
- Description: MOSFET (Metal Oxide) N-Channel Tube 75m Ω @ 31A, 10V ±30V 19800pF @ 25V 1050nC @ 10V SOT-227-4, miniBLOC (Kg)
- Delivery:
- Payment:
In Stock
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The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Mount | Chassis Mount, Screw |
| Mounting Type | Chassis Mount |
| Package / Case | SOT-227-4, miniBLOC |
| Number of Pins | 4 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Series | POWER MOS V® |
| Published | 1997 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| Additional Feature | AVALANCHE ENERGY RATED |
| Voltage - Rated DC | 600V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | UPPER |
| Terminal Form | UNSPECIFIED |
| Current Rating | 62A |
| Pin Count | 4 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 700W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 700W |
| Case Connection | ISOLATED |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 75m Ω @ 31A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 5mA |
| Input Capacitance (Ciss) (Max) @ Vds | 19800pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 62A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 1050nC @ 10V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Continuous Drain Current (ID) | 62A |
| Gate to Source Voltage (Vgs) | 30V |
| Drain-source On Resistance-Max | 0.075Ohm |
| Avalanche Energy Rating (Eas) | 3600 mJ |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
