APT50M80B2VRG

MOSFET (Metal Oxide) N-Channel Tube 80m Ω @ 29A, 10V 8797pF @ 25V 423nC @ 10V TO-247-3 Variant


  • Manufacturer: Microsemi Corporation
  • NO: 523-APT50M80B2VRG
  • Package: TO-247-3 Variant
  • Datasheet: pdf
  • Stock: 3441
  • Description: MOSFET (Metal Oxide) N-Channel Tube 80m Ω @ 29A, 10V 8797pF @ 25V 423nC @ 10V TO-247-3 Variant (Kg)

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SPECIFICATIONS

Parameters
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3 Variant
Number of Pins 3
Packaging Tube
Series POWER MOS V®
Published 2012
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN SILVER COPPER
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature FAST SWITCHING, AVALANCHE RATED, HIGH VOLTAGE
Voltage - Rated DC 500V
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Current Rating 58A
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 625W
Case Connection DRAIN
Turn On Delay Time 14 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 80m Ω @ 29A, 10V
Vgs(th) (Max) @ Id 4V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds 8797pF @ 25V
Current - Continuous Drain (Id) @ 25°C 58A Tc
Gate Charge (Qg) (Max) @ Vgs 423nC @ 10V
Rise Time 25ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 23 ns
Turn-Off Delay Time 64 ns
Continuous Drain Current (ID) 58A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.08Ohm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

In Stock

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