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ContactAPT40SM120S
SiCFET (Silicon Carbide) N-Channel Bulk 100m Ω @ 20A, 20V +25V, -10V 2560pF @ 1000V 130nC @ 20V 1200V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Manufacturer: Microsemi Corporation
- NO: 523-APT40SM120S
- Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet:
- Stock: 8690
- Description: SiCFET (Silicon Carbide) N-Channel Bulk 100m Ω @ 20A, 20V +25V, -10V 2560pF @ 1000V 130nC @ 20V 1200V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA (Kg)
- Delivery:
- Payment:
In Stock
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Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time
zone and country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Lifecycle Status | OBSOLETE (Last Updated: 1 month ago) |
| Factory Lead Time | 22 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Bulk |
| Published | 1997 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Technology | SiCFET (Silicon Carbide) |
| Power Dissipation-Max | 273W Tc |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 100m Ω @ 20A, 20V |
| Vgs(th) (Max) @ Id | 3V @ 1mA (Typ) |
| Input Capacitance (Ciss) (Max) @ Vds | 2560pF @ 1000V |
| Current - Continuous Drain (Id) @ 25°C | 41A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 130nC @ 20V |
| Drain to Source Voltage (Vdss) | 1200V |
| Drive Voltage (Max Rds On,Min Rds On) | 20V |
| Vgs (Max) | +25V, -10V |
| Continuous Drain Current (ID) | 41A |
| RoHS Status | RoHS Compliant |
