APT37M100B2

MOSFET (Metal Oxide) N-Channel Tube 330m Ω @ 18A, 10V ±30V 9835pF @ 25V 305nC @ 10V 1000V TO-247-3 Variant


  • Manufacturer: Microsemi Corporation
  • NO: 523-APT37M100B2
  • Package: TO-247-3 Variant
  • Datasheet: pdf
  • Stock: 8039
  • Description: MOSFET (Metal Oxide) N-Channel Tube 330m Ω @ 18A, 10V ±30V 9835pF @ 25V 305nC @ 10V 1000V TO-247-3 Variant (Kg)

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SPECIFICATIONS

Parameters
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Factory Lead Time 18 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3 Variant
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1997
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish PURE MATTE TIN
Additional Feature AVALANCHE RATED
Voltage - Rated DC 1kV
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Current Rating 37A
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1135W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 44 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 330m Ω @ 18A, 10V
Vgs(th) (Max) @ Id 5V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds 9835pF @ 25V
Current - Continuous Drain (Id) @ 25°C 37A Tc
Gate Charge (Qg) (Max) @ Vgs 305nC @ 10V
Rise Time 40ns
Drain to Source Voltage (Vdss) 1000V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 38 ns
Turn-Off Delay Time 150 ns
Continuous Drain Current (ID) 37A
Gate to Source Voltage (Vgs) 30V
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

In Stock

Please send RFQ , we will respond immediately.