APT34N80B2C3G

MOSFET (Metal Oxide) N-Channel Tube 145m Ω @ 22A, 10V ±20V 4510pF @ 25V 355nC @ 10V TO-247-3 Variant


  • Manufacturer: Microsemi Corporation
  • NO: 523-APT34N80B2C3G
  • Package: TO-247-3 Variant
  • Datasheet: pdf
  • Stock: 12056
  • Description: MOSFET (Metal Oxide) N-Channel Tube 145m Ω @ 22A, 10V ±20V 4510pF @ 25V 355nC @ 10V TO-247-3 Variant (Kg)

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SPECIFICATIONS

Parameters
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Factory Lead Time 18 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3 Variant
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1997
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Additional Feature AVALANCHE RATED
Voltage - Rated DC 800V
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Current Rating 34A
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 417W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 417W
Case Connection DRAIN
Turn On Delay Time 25 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 145m Ω @ 22A, 10V
Vgs(th) (Max) @ Id 3.9V @ 2mA
Input Capacitance (Ciss) (Max) @ Vds 4510pF @ 25V
Current - Continuous Drain (Id) @ 25°C 34A Tc
Gate Charge (Qg) (Max) @ Vgs 355nC @ 10V
Rise Time 15ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 6 ns
Turn-Off Delay Time 70 ns
Continuous Drain Current (ID) 34A
Gate to Source Voltage (Vgs) 20V
Avalanche Energy Rating (Eas) 670 mJ
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

In Stock

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