APT30M85BVFRG

MOSFET (Metal Oxide) N-Channel Tube 85m Ω @ 500mA, 10V ±30V 4950pF @ 25V 195nC @ 10V TO-247-3


  • Manufacturer: Microsemi Corporation
  • NO: 523-APT30M85BVFRG
  • Package: TO-247-3
  • Datasheet: pdf
  • Stock: 7105
  • Description: MOSFET (Metal Oxide) N-Channel Tube 85m Ω @ 500mA, 10V ±30V 4950pF @ 25V 195nC @ 10V TO-247-3 (Kg)

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SPECIFICATIONS

Parameters
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series POWER MOS V®
Published 1997
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Additional Feature FREDFET
Voltage - Rated DC 300V
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Current Rating 40A
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 300W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Case Connection DRAIN
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 85m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 4950pF @ 25V
Current - Continuous Drain (Id) @ 25°C 40A Tc
Gate Charge (Qg) (Max) @ Vgs 195nC @ 10V
Rise Time 10ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 43 ns
Continuous Drain Current (ID) 40A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.085Ohm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

In Stock

Please send RFQ , we will respond immediately.