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ContactAPT25SM120B
SiCFET (Silicon Carbide) N-Channel Bulk 175mOhm @ 10A, 20V +25V, -10V 72nC @ 20V 1200V TO-247-3
- Manufacturer: Microsemi Corporation
- NO: 523-APT25SM120B
- Package: TO-247-3
- Datasheet:
- Stock: 6620
- Description: SiCFET (Silicon Carbide) N-Channel Bulk 175mOhm @ 10A, 20V +25V, -10V 72nC @ 20V 1200V TO-247-3 (Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
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Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time
zone and country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247 |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Bulk |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Technology | SiCFET (Silicon Carbide) |
| Power Dissipation-Max | 175W Tc |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 175mOhm @ 10A, 20V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Current - Continuous Drain (Id) @ 25°C | 25A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 72nC @ 20V |
| Drain to Source Voltage (Vdss) | 1200V |
| Drive Voltage (Max Rds On,Min Rds On) | 20V |
| Vgs (Max) | +25V, -10V |
| Continuous Drain Current (ID) | 25A |
| Rds On Max | 175 mΩ |
| RoHS Status | RoHS Compliant |
