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MOSFET (Metal Oxide) N-Channel Tube 430m Ω @ 7A, 10V ±30V 2882pF @ 25V 72nC @ 10V 600V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Manufacturer: Microsemi Corporation
- NO: 523-APT15F60S
- Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet:
- Stock: 8567
- Description: MOSFET (Metal Oxide) N-Channel Tube 430m Ω @ 7A, 10V ±30V 2882pF @ 25V 72nC @ 10V 600V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA (Kg)
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| Parameters | |
|---|---|
| Packaging | Tube |
| Series | POWER MOS 8™ |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 290W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 430m Ω @ 7A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 500μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2882pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 16A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 72nC @ 10V |
| Drain to Source Voltage (Vdss) | 600V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Continuous Drain Current (ID) | 16A |
| Drain-source On Resistance-Max | 0.43Ohm |
| Pulsed Drain Current-Max (IDM) | 54A |
| DS Breakdown Voltage-Min | 600V |
| Avalanche Energy Rating (Eas) | 405 mJ |
| RoHS Status | RoHS Compliant |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
